Feasibility tests of SiC thin films by sputtering

Summary form only given. Silicon carbide (SiC) is one of the most important materials in recent years. SiC single crystalline substrates are used for high-temperature and fast-acting electron devices. The hydrogenated amorphous silicon-carbide alloy thin films have been of technical interest as an optoelectronic material. These films have important applications also as p-type layers in amorphous silicon photovoltaic devices. Common methods applied for silicon carbide films deposition are plasma enhanced CVD under plasma decomposition of organic compounds such as CH/sub 4/, C/sub 2/H/sub 2/, C/sub 3/H/sub 8/. In this paper, Si/sub x/C/sub y/ thin films were deposited on silicon and glass substrates using magnetron DC sputtering, a ceramic SiC target and argon plasma. Sputtering was provided as a continuous process and as a consequent sputtering of two targets: ceramic SiC and single crystalline Si. Optical, and dielectric properties of the obtained films were investigated. The obtained films were transparent and behaved as dielectric in the Al-Si/sub x/C/sub y/-Al and Al-Si/sub x/C/sub y/-Si structures.