A new multi-channel dual-gate poly-Si TFT employing excimer laser annealing recrystallization on pre-patterned a-Si thin film

We have proposed a new excimer laser annealing method which employs a floating a-Si thin film structure and the effect of pre-patterning. The proposed ELA produces two-dimensional grain growth so that a high quality grain structure can be obtained. We have also fabricated poly-Si TFTs by adapting the proposed ELA method. The dual-gate structure is used for the elimination of grain boundaries in the channel. The proposed poly-Si TFT exhibits high performance electrical characteristics, e.g. a high mobility of 504 cm/sup 2//V sec and low subthreshold slope of 0.337 V/dec.