A resistive-gate In/sub 0.53/Ga/sub 0.47/As/InP heterostructure CCD

The first InGaAs/InP charge-coupled device (CCD) is demonstrated, exhibiting a charge transfer efficiency (CTE) of 0.98 at 13 MHz and 1 GHz. Cooling the device improves the CTE to greater than 0.99 at 13-MHz clock frequency. The 0.76-eV In/sub 0.53/Ga/sub 0.47/As bandgap makes this structure applicable to direct-detection short-wavelength infrared (SWIR) imagers.<
>