Transistor nonlinearity-dependence on emitter bias current in P-N-P Alloy junction

A method of calculating the nonlinear behavior of class A common emitter transistor amplifiers from linear small signal measurements is given. Experimental results, obtained with a 500-milliwatt p-n-p alloy junction transistor, show the second and third harmonic distortion as a function of emitter bias current and driving source resistance. Distortion, calculated from small signal measurements, is shown for comparison.