Long wavelength VCSEL using ion-implantation and dielectric mirror

We proposed a new type of 1550 nm VCSEL incorporating proton implantation and a dielectric mirror. Even though it suffers from poor heat removal rate, it could be a promising structure since the structure and fabrication scheme rely on stable material and well-established processing techniques. The fabricated laser operates under pulsed conditions emitting at 1550 nm. The use of flip-chip bonding and good choice of dielectric material may improve the overall laser performance.