10 Gbps all silicon APD optical receiver

Summary form only given. In this paper, we report an all silicon optical receiver operating at 10 Gbps. A high quantum efficiency-bandwidth product was achieved by operating the photodiode in the avalanche regime. Planar p-i-n photodiodes were fabricated using standard CMOS technology on commercially available 2 /spl mu/m SOI substrates. The photodiodes exhibited 3 dB optical bandwidth greater than 8 GHz. At higher bias, avalanche gain was observed. In this work, the photodiode was wire-bonded to a 10 Gbps transimpedance amplifier (TIA).