III-V materials growth by hydride VPE for high frequency optoelectronic devices

Hydride vapour phase epitaxy is flexible for fabricating buried heterostructure lasers yielding high bandwidth. Its potential for long and short wavelength lasers based on the emerging materials systems GaAs/GaInAs(N)(Sb) and GaAs/AlGaAs, respectively is highlighted. In-situ mesa etching cum immediate regrowth and heteroepitaxy of InP on silicon are additional facilities offered by HVPE.