A 5V-only 16K EEPROM utilizing oxynitride dielectrics and EPROM redundancy

MEMORY DEVICES utilizing EEPROM cells have been widely pursued. In recent years the ability to grow high-quality thin dielectric in the range of lOOA has brought about the development of EEPROM cells which utilize electron tunneling for both program and erase. However, in previous EEPROM designs1.2 utllmng thea bove approach, an additional 20Vo r higher supply is required for programming which makes it incompatible with future microprocessor systems. This paper will describe an N-channel2K x 8 EEPROM where reading, writing and erasing operations are from a single 5V supply. This is achieved through a low-power cell design utilizing oxynitride tunnel dielectric and through internal charge pump circuitry for voltage multiplication.