A power bipolar transistor optimized for linear performance with octave capability

A NEW GENERATION of silicon bipolar transistors has recently been developed for microwave applications. The transistors provide state-of-the-art performance up to the 5-GHz region. Within this family a power transistor, having excellent linearity at high frequencies, has also been developed. This transistor is especially well suited for linear power applications in communications systems, microwave radar, and ECM systems in the 2 to 5-GHz region. The designs afford a combination of linear power output, gain, low distortion and ease of broadband matching