Pulsed IMPATT diode oscillators above 200 GHz

RECENTLY THE IMPATT diode has been shown to be a promising device for generating power at frequencies exceeding 200 GHz. A CW output power of 50 mW at 202 GIlz with a 1.3% conversion efficiency has been reported’. This paper will describe IMPATT diode packaging and circuit techniques used to attain high-power pulsed oscillation above 200 GHz. Peak power output exceeding 400 mW at 212 GIlz with a 2.6% conversion efficiency has been achieved.