Dielectric Properties of Thin Insulating Films of Photoresist Material

This paper discusses measurements of the dielectric properties of thin insulating films of AZ-17
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and KPR.
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The properties include conductivity and dielectric constant as a function of frequency, voltage, and temperature. Also, films have been temperature cycled from 3° to 500° K to determine if structural defects appear. These measurements show that specially prepared films are suitable as large area insulators for fabricating multilayer film circuits. To illustrate the advantages of using photoresist films for both insulator and etch resist, a brief description of a process for fabricating cryotrons will be presented.