Sputtered Titanium Oxide Films for Microcircuit Applications

This paper describes the techniques used for, and the results obtained from, non-reactive and reactive sputtering of titanium to form resistor and capacitor elements by compatible processes. Unprotected resistor elements of low ohms per square attained stability on aging and yielded moderate values of temperature coefficient. Unprotected capacitor elements of 0.05 cm
²
area yielded an average capacitance of 0.015 \muF or 0.30 \muF/cm
²
., the temperature coefficient being between 2OO and 400 ppm/°C. The capacitance dropped very slightly as a function of frequency in the range 500c to 100kc. Typical dissipation factor was about 0.04 at 1 kc increasing to about 0.09 at 100 kc. Film uniformity and reproducibility have been established. Analytical methods used for studying the basic and structural properties of the films are reported.