Internally Matched (IM) Plated Source Bridge (PSB) Power GaAs FET Achieving A High Performance Power Amplifier In X-band

Internal matched devices with 2W and 5W power output at 10 GHz have been developed by using up-side-down mounted GaAs FETs which have PSB (Plated Source Bridge) structures. By parallel running two 5W devices, 7W solid-state power amplifiers in X-band have been practical.