Ion-Implanted K-Band GaAs Power FET

This paper reports the performance up to 26 GHz from a GaAs power FET produced by ion implantation. At 15 GHz, an output power of 250 mW at 3 dB gain with 27.4% power-added efficiency was obtained. At 26 GHz, 55 mW at 3 dB gain with 5% power-added efficiency was demonstrated. Capless annealing and a novel lift-off gate fabrication scheme was employed.