Super Low Noise Packaged GaAs FETS for Ku Band

By selecting a high quality GaAs epitaxial wafer and reducing parasitics, packaged FETs with NF/sub min/ of 2.4 dB and G/sub a/ of 7.5 dB at 18 GHz were produced. Using these FETs, a single stage amplifler with NF of 2.7 dB and G of 6.4 dB at 18 GHz was constructed.