A Novel Active Temperature Management Strategy for SiC MOSFETs

A major factor limiting the reliability of SiC MOSFETs is junction temperature fluctuation under nonstationary conditions. This paper proposes an equivalent gate resistance control (EGRC) method to dynamically regulate switching loss, enabling active thermal management (ATM) of individual devices. Unlike conventional multiplexer-based approaches, the proposed method uses only two discrete resistors, reducing circuit complexity while achieving continuous control via delay modulation. Experimental results show that the proposed ATM method can effectively suppress temperature fluctuations (from 18.83K to 9.85K), and the lifetime model estimation indicates a potential improvement of up to 2.18 times. To address the trade-off between reliability and efficiency, this paper further introduces the concepts of Temperature Control Operating Space (TCOS) and Junction Temperature Control Coefficient (JTCC), enabling coordinated lifetime improvement with minimal additional power loss.