Metallic Impurity Gettering Behavior of Hydrocarbon-Molecular-ion-Implanted Epitaxial Silicon Wafer During the pn-Junction Diode Fabrication Process

We investigate the leakage current density– voltage (J–V) characteristics and gettering behavior of metallic impurities using a pn-junction diode fabricated with hydrocarbon (C3H5)-molecular-ion-implanted epitaxial silicon wafer. The pn-junction diode with C3H5 molecular ion implantation reduced the reverse leakage current. Additionally, metallic impurities such as Cu, Fe, and Au, identified by Deep level transient spectroscopy (DLTS) analysis, and oxygen dissolved in the silicon substrate were gettered in the C3H5-molecular-ion-implanted region. Furthermore, it became clear that the gettering behavior of metallic impurities and oxygen competes with one another during the pn-junction fabrication process. These findings suggest that lowering the oxygen concentration in silicon substrates improves the gettering capacity of metallic impurities.