Analysis of Charge Loss Decomposition and Nonlinear Ea in 3-D NAND Flash Memory Using a Neutral Cell-Based Method

A charge loss decomposition method using neutral cells has been proposed in 3-D NAND flash memory. The pattern-dependent threshold voltage (V_T) equations and E-field acceleration factors are derived to analyze the temperature-dependent behavior of charge loss mechanisms. The program-erase-program (PEP) pattern exhibits the most significant lateral migration of holes (LMH) at 120 °C, while the erase-program-erase (EPE) pattern consistently shows the largest trap-to-band tunneling of electrons (TBE), regardless of retention temperatures. The activation energy (E_a) of the EPE pattern has been extracted, revealing that the nonlinear E_a behavior is primarily caused by TBE.