Trap-Induced Leakage Current Increase in β-Ga₂O₃ Schottky Barrier Diodes Under 473 MeV Kr Ion Irradiation

In this study, we subjected reverse-bias β-Ga₂O₃ Schottky barrier diodes (SBDs) to 473 MeV Kr heavy ion irradiation. The results show that heavy ion irradiation under reverse bias conditions causes degradation of the Schottky interface and increases the resistivity of the bulk region. The notable rise in leakage current after irradiation is associated with the formation of E2* (EC − 0.71 eV) and E3 (EC – 1.03 eV) traps near the Schottky interface. The proliferation of these traps causes a shift in the charge carrier transport mechanism from Poole-Frenkel (P-F) emission before irradiation to trap-assisted tunneling (TAT) after irradiation. This change in emission mechanism is a key factor driving the increased leakage current in β-Ga₂O₃ SBDs, ultimately leading to single-event burnout (SEB) under heavy ion irradiation. These results highlight the urgent need for further research into the radiation tolerance of β-Ga₂O₃ devices and the development of design strategies to enhance the resilience of β-Ga₂O₃ SBDs in space environments.