Material Properties of Sc0.3Al0.7N Thin Films Derived from Electrical Measurements: A Study on Thickness and Temperature Dependence

We present the results of using an electrical method to extract intrinsic thin-film material properties with bulk acoustic wave resonators made from Sc0.3Al0.7N. This approach enables wafer-scale mapping of piezoelectric coefficients, elastic constants, and density. It can be applied to full-wafer material properties characterization, reveal thickness-dependent piezoelectric response and temperature coefficient. This methodology enables high-throughput wafer level characteristics and supports design optimization with wafer level material-property distributions rather than single-point values.