A Highly Reliable Dual-Node-Upset-Tolerant 20T Radiation Hardened SRAM Cell for Aerospace Applications

In semiconductor devices, single-node-upset (SNUs) and dual-node-upset (DNUs) have become significant problems in semiconductor devices because of shrinkage in technology and radiation-induced effects. In order to provide immunity to SRAM cells in space environments, a highly reliable radiation-tolerant 20T (RT-20T) SRAM design has been proposed that is resilient to both single-node-upset (SNU) and dual-node-upset (DNU). The simulation was performed in Cadence Virtuoso in UMC 65nm CMOS technology at 27∘C. The proposed cell contains the least number of sensitive nodes and node-pair. The proposed RT-20T exhibits 2.292x/ 1.424x/ 1.456x/ 1.246x/ 1.246x/ 1.14x/ 2.007x/ 1.549x/ 1.467x/ 1.409x/ 1.552x/ 1.519x shorter read access time (RAT) than NS10T/ QUCCE12T/ QCCS/ SCCS/ DNUCTM/ DNUSRM/ QCCM12T/ S4P8N/ S8P4N/ SCCS18T/ CC18T/ LPDNUR and 3.572x/ 1.679x/ 1.533x/ 2.504x/ 2.504x/ 3.611x/ 1.786x/ 1.873x/ 1.883x/ 2.514x/ 2.398x/ 2.281x lower write access time (WAT) than NS10T/ QUCCE12T/ QCCS/ SCCS/ DNUCTM/ DNUSRM/ QCCM12T/ S4P8N/ S8P4N/ SCCS18T/ CC18T/ LPDNUR @VDD = 1V. The proposed cell also consumes 1.072x/ 1.608x/ 1.072x/ 1.608x/ 2.144x/ 1.072x/ 1.608x less leakage power than QUCCE12T/ QCCS/ SCCS/ DNUCTM/ DNUSRM/ QCCM12T/ SCCS18T respectively. However, these gains come at the expense of lower read stability.