Development of 2D Carrier Transport Model for Random Dopant Effect and Exciton Coupling Model

A novel 2D simulation solver for doped OLEDs, incorporating a random doping model, overcomes 1D constraints. Validated experimentally, it shows low doping creates current-limiting traps (via deeper guest levels) rather than altering mobility. The model pinpoints EML/ETL recombination and identifies host triplet-triplet annihilation and guest hole-polaron quenching as key losses at high currents, offering routes for OLED optimization.