Simulations of Light Emission at Reverse Voltage of Wide-Well InGaN Light-Emitting Diodes

GaN-based heterostructures are typically grown in the polar direction. Due to differences in polarization constants between layers of varying composition and the built-in strain, significant interfacial charges emerge. This phenomenon is particularly important for quantum wells (QWs), where the resulting built-in electric fields lead to the quantum-confined Stark effect (QCSE) and a spatial separation of electrons and holes. This separation significantly reduces the radiative recombination efficiency, especially in wider quantum wells where the increased distance between carriers is more detrimental to recombination.