Proposal for Novel Applications of Advanced Geometries in Solar Cells Construction

This study introduces a novel approach to enhance solar cell performance through advanced geometric architectures, focusing on two design layout styles: the Rectangular Structure (SC RE) and the Half-Octagonal Structure (SCHO). Both solar cells, incorporating a PIN diode and a MOS capacitor to control the depletion region in the substrate region, were analyzed using three-dimensional numerical simulations with Sentaurus TCAD. The SC HO features a 38.15° oblique boundary, optimizing electric field distribution and photogenerated charge carrier collection. Results show that SC HO outperforms SC RE, achieving a short-circuit current (Isc) of 30 nA ($6.4\%$ higher than SC RE's 28.2 nA), a maximum power ($\mathrm{P}_{\text {max }}$) of 11.1 nW ($6.7\%$ higher than SC RE's 10.4 nW), an efficiency ($\eta$) of $18.5\%(6.7\%$ higher than SC RE's 17.33%) and a fill factor (FF) of $\text{7 5. 5}$ ($\text{1. 8\%}$ higher than SC RE's 74.2). However, SC RE exhibits a slightly higher open-circuit voltage (Voc) of 0.497 V compared to SC HO's 0.490 V. Additionally, under applied gate voltage (VGC), SCHO demonstrates a $4.8\%$ higher load current $\left(-\mathrm{I}_{\mathrm{L}}\right)$. These findings highlight the potential of the use of a PIN diode, a MOS Capacitor, and a Half-Octo layout style for improving the electrical performance of the solar cell and reducing recombination losses.