Simulation-Based Analysis of Maximum Deliver Power in Dickson Charge Pumps Using Diode-Mode UTBB Transistors

This work presents a simulation-based study of Dickson charge pump circuits employing Ultra-Thin Body and Buried Oxide (UTBB) transistors operating in diode mode with positive body bias. The goal is to enhance output performance by fine-tuning key circuit components. Extensive simulations were conducted to evaluate how variations in component values and bias voltages affect output voltage, power efficiency, and overall circuit behavior. The results highlight the strong influence of positive body bias on performance parameters and demonstrate how component-level adjustments can significantly improve voltage gain and reduce energy losses. These findings provide valuable guidelines for the design of energy-efficient charge pump systems in low-power electronic applications.