Evaluation of the Impact of RDF on the On-Current of a Nanowire Transistor Through Quantum-Corrected Monte Carlo Simulations

This work aims to evaluate the impact of a single dopant position in the channel on the on-current of nanowire MOS transistors through atomistic simulations. The dopant was placed in 27 different positions along the silicon layer, and the device was biased with different gate voltages and a drain voltage of 0.9 V. The results of the atomistic simulations show that the dopant in the middle of the cross-section near the source-channel interface has the highest impact on the oncurrent, with a reduction of 33.11% in comparison with a device without any dopant in the channel, operating at VGS of 0.4 V.