Evaluation of Analog Parameters of nMOSFETs from a 180 nm Technology at Low Temperatures

Experimental results of analog parameters of nMOSFETs fabricated in a 180 nm commercial CMOS technology, with different channel lengths, operating at temperatures ranging from 300 K down to 93 K, are presented and discussed in this paper. The transconductance-to-current ($\mathrm{g}_{\mathrm{m}}/\mathrm{I}_{\text{DS}}$) ratio, Early voltage ($\mathrm{V}_{\text{EA}}$), and intrinsic voltage gain (Av) were analyzed.