Electric Characterization of Rare Earth Doped Porous Silicon via Electrochemical Impedance Spectroscopy

Rare-earth-doped porous silicon is a promising material for photovoltaic and light-emitting applications. However, the electrical properties of these rare-earth doped porous structures require further characterization to optimize their performance. To address this gap, this study synthesized erbium- and ytterbium-doped porous silicon using an electrochemical etching process. The samples were systematically characterized using X-ray diffraction, energydispersive X-ray spectroscopy, scanning electron microscopy, and electrochemical impedance spectroscopy to assess their structural, chemical, morphological, and electrical properties. The results confirm the successful incorporation of rare-earth elements and the formation of ternary oxides. Furthermore, doping with rare-earth elements was found to significantly reduce electrical resistance, suggesting potential improvements in device efficiency.