Characterization of the Ohmic Contact of $\text{Ni}_{\mathrm{x}} \text{Si}_{\mathrm{y}}$ for 4H-SiC-Based Schottky Diode

The Schottky diode is one of the main elements in SiC-based devices. In this paper, $\text{Ni}_{\mathrm{x}} \text{Si}_{\mathrm{y}}$ films, formed by sintering of Ni on SiC substrate, were characterized in order to evaluate their performance as ohmic contact in Schottky diodes. The films fabricated using long and short time treatment, with and without preheating condition were investigated. Short-time treatment with a preheating step promoted the formation of more uniform and homogeneous nickel silicide films, which exhibited ohmic behavior.