Analysis of Total Ionizing Dose Effects in Power Transistors with Different Layout Designs

This study aims to compare the functionality of power transistors with ELT and rectangular layouts, focusing on the effects of TID in harsh environmental situations. The physical mechanisms influencing the functionality of these devices will be presented through the analysis of changes in their current-voltage characteristic curves. The DUTs (Device Under Test) were submitted to a total accumulated dose of $\text{3 0 0 ~ k r a d}(\text{S i})$ of 10 keV X-rays. The behavior of the devices under the referred irradiation conditions suggests that the ELT layout does not exhibit greater TID tolerance compared to a rectangular gate geometry device for the analyzed parameters.