Ultra-Wideband CMOS Amplifier Based on Peak Inductance Technique

This paper presents an ultra-wideband driver amplifier based on 55nm CMOS process. To solve the problems of conventional amplifiers with low gain and poor integration, a new research scheme of 3–18 GHz amplifier based on peak inductance and negative feedback technique is proposed. To address the broadband characteristics of the amplifier, this paper introduces a broadband matching technique, utilizing an RC negative feedback configuration and a peak inductance structure. Additionally, to reduce the overall power consumption of the circuit, current reuse techniques are employed to realize low power consumption; along with source inductance feedback to adjust the amplifier's noise figure and amplifier's input matching. Test results show that within the 3-18GHz frequency band the gain of the amplifier is greater than 16dB, S22 is less than - 3dB, and OP1dB is approximately 7.8dBm at 10GHz.