TCAD-Oriented Physical Modeling of Temperature-Dependent Inversion Layer Mobility in SiC MOSFETs

Closed-form mobility models for SiC MOS interfaces were developed based on scattering theory, explicitly incorporating temperature dependence using power-law approximations. These models improve the physical accuracy and predictive capability of TCAD simulations for SiC MOSFETs, and provide insight into the dominant scattering mechanisms at the interface.