Purge Effect Simulation of Atomic Layer Deposition for High Aspect Ratio Structure

We investigated the purge effect in the atomic layer deposition (ALD) process using an in-house voxel-based topography simulator. The simulator incorporates various reaction models, including chemisorption, physisorption, activation at chemisorption and physisorption sites, and purge reactions. These reaction models enable accurate simulation of the actual purge step, which is crucial for controlling film quality and uniformity in ALD. We present simulations of fullcycle ALD processes in trench structures with varying aspect ratios under different purge flux conditions.