A Bandgap Reference Source with Wide Temperature Ranges and High PSRR

This paper design a bandgap reference (BGR) circuit featuring low temperature drift and high power supply rejection ratio (PSRR). By leveraging the clamping effect of the operational amplifier, the influence of the collector current in the bipolar transistor is eliminated. Additionally, the method of matching emitter areas in the transistors mitigates the impact of reverse diode leakage current at high temperatures. Compared to existing techniques, this design achieves low temperature drift and high PSRR without requiring additional high-order temperature compensation circuits in the circuitry. The BGR circuit is implemented in a $0.18 \mu \mathrm{~m} 5 \mathrm{~V}$ BCD process. Simulation results demonstrate that across a temperature range of $-40^{\circ} \mathrm{C}$ to $125^{\circ} \mathrm{C}$, the BGR exhibits a temperature coefficient of $6.5 \mathrm{ppm} /{ }^{\circ} \mathrm{C}$ and a PSRR of -90.19 dB. The proposed BGR is well-suited for integrated circuits requiring high-precision reference voltages.