A High-Performance CMOS Rectifier Employing Adaptive Hybrid Topology With 22.3-dB Dynamic Range for IoT Applications

This brief presents a wide-dynamic-range RF-to-DC rectifier for ambient RF energy harvesting in IoT applications. A variable self-bias technique is employed to clamp the PMOS gate voltage, thereby suppressing reverse-leakage current at high input power and extending the power-dynamic range (PDR). A hybrid topology enables adaptive switching to a differential Dickson configuration under elevated input levels, further broadening the PDR. Implemented in a 65 nm standard CMOS process and simulated at 900 MHz, the rectifier achieves peak power-conversion efficiencies (PCE) of 74.1 % and $73.5 \%$ with PDRs of 22.3 dB and 18.7 dB under $100 \mathrm{k} \Omega$ and $50 \mathrm{k} \Omega$ loads, respectively. Comparative analysis with recent state-of-the-art designs demonstrates the superior performance of the proposed architecture, offering a compelling solution for RF energy harvesting in wireless sensor networks.