High remnant polarization (2Pr>65μC/cm2) in Sputtered HfxZr1-xOy Thin Films

In this letter, we are reporting the effect of Zr concentration on the remnant polarization (P_r) of co-sputtered HfO₂:ZrO₂ (HZO) thin films with the highest 2P_r of ~66 μC/cm² on Silicon substrate and Tungsten (W) as a top electrode for the first time. The x-ray diffraction confirms the increment in monoclinic (m) phase and crystallite size with increasing Zr content which modulates the P_r. The x-ray photoelectron spectroscopy confirms the chemical composition of the films. Our results show the highest 2P_r >51 μC/cm² over a wide range of Zr concentration (6%-43%) and akin to the previously reported 2P_r of atomic layer deposited (ALD) HZO films. The study opens pathways to engineer the sputtered HZO films with high-volume manufacturing and high P_r for non-volatile memory applications.