A 100 MHz Heterogeneous GaN/Si-CMOS 12 V-to-24 V Boost Converter with Soft-Switching Technique

This article presents a 100 MHz single-switch boost converter with heterogeneous integration of gallium nitride (GaN) and Si-CMOS technologies. GaN devices are used as power switches and freewheeling diodes, which are integrated with silicon-based Si-CMOS circuits. A soft-switching technique is proposed as an alternative to traditional resonant converters, leveraging the intrinsic parasitic capacitance of GaN devices to replace traditional off-chip capacitors for soft switching, thereby significantly improving efficiency and system integration. In addition, a closed-loop control circuit is designed in this work to ensure a stable output voltage under varying loads. Simulations show that the proposed boost converter achieves a peak efficiency of 89.7% at an output power of 12 W, operating at a 100 MHz frequency with a 12 V to 24 V voltage conversion ratio. The maximum output power can reach up to 15.94 W, while occupying an area of only $3.9 \times 1.9 \text{mm}^{2}$.