A 2-9 GHz SiGe Broadband High-Gain Low Noise Amplifier Using Resistive Feedback Technology

This paper presents the design and implementation of a SiGe BiCMOS broadband high-gain low noise amplifier (LNA) operating in the 2 to 9 GHz frequency range. The LNA utilizes advanced SiGe heterojunction bipolar transistor (HBT) technology, which offers high cutoff frequencies and low noise performance, making it ideal for broadband applications. The resistive-feedback and inductive-peaking techniques are employed to enlarge the bandwidth. Moreover, the inductivedegeneration technique and L-matching network are utilized to realize a wideband noise and input impedance matching simultaneously. The LNA is fabricated in a $0.13-\mu \mathrm{m}$ SiGe BiCMOS technology. It achieves a peak gain of 22.8 dB and a minimum noise figure (NF) of 2.7 dB at room temperature. The outputreferred 1-dB compression point (OP1dB) is 3.58 dBm. The S11 is below −10 dB from 1.4 to 9.3 GHz and S22 is below − 10 dB from 1.9 to 10.5 GHz.