A Broadband W-Band Balanced Power Amplifier in 0.1 μm GaAs Technology

This paper presents a broadband W-band balanced 5-stage power amplifier in 0.1-μm GaAs pHEMT process. Due to the lower transit frequency of the GaAs process, its advantages in high power capacity and low noise are difficult to realize at frequencies close to 100 GHz. Therefore, the amplifier uses dual T-junctions for broadband impedance matching, optimizes the layout of bypass capacitors to extend the bypass bandwidth, and utilizes Lange couplers to achieve balanced input/output. Under the limit of GaAs layout rules, this paper realizes an unconditionally stable power amplifier with a gain of over 20 dB from 72 GHz to 105 GHz, and a maximum output power of 20.2 dBm at 86 GHz.