A Novel Non-Volatile RF Switch Using Resistive Random-Access Memory Device

This paper proposes a low-loss DC-Ku band switch using the Resistive Random-Access Memory (RRAM) process. RRAM leverages its innovative resistive switching mechanism to outperform traditional transistors with advantages like non-volatile data retention, rapid read/write speeds, high storage density, and low power-consumption, while maintaining Complementary Metal Oxide Semiconductor (CMOS) compatibility. RRAM has emerged as an ideal solution for Internet of Things (IoT), and wearable devices. The key innovation of this switch is the use of a tapered ground structure, which achieves an improvement in isolation. Both simulated and measured results show that the switch provides an insertion loss of less than 1 dB across the DC-Ku band (measured 0.851 dB @ 18 GHz), and the isolation exceeds 7.5 dB.