High-Efficiency L-Band Rectifier Featuring GaN Diode with Low Turn-on Voltage

This study presents a high-performance RF-to-DC rectifier designed for wireless power transfer (WPT) systems, capable of delivering up to 17.8 W. To address the limitations of traditional diodes in handling high power, a rectifier is constructed using a gallium nitride (GaN) integrated circuit (IC) Schottky barrier diode (SBD) employing a quasi-vertical configuration. Leveraging the exceptional material characteristics of GaN, such as its high electron mobility, wide bandgap, and high saturation velocity, the diode achieves an exceptionally low turn-on voltage of 0.24 V (measured at 1 A/cm²) coupled with a high breakdown voltage of 170 V, significantly improving rectification performance. Utilizing this advanced diode, a high-power rectifier capable of operating over a wide range of input power levels while maintaining high efficiency is developed. The proposed rectifier architecture integrates a single-shunt self-developed diode and a Class-F harmonic control network, achieving a peak power conversion efficiency of 70.5% at an input power of 41.8 dBm and an operating frequency of 0.91 GHz. This work highlights the potential of GaN-based rectifiers for high-efficiency, high-power WPT applications.