A 200GHz Power Amplifier with 15.3-dBm Psat Utilizing Gm-boosting and Multi-coupled-line Balun Combining in 130-nm SiGe BiCMOS

This article presents a sub-THz four-way three-stage differential power amplifier (PA) in 130-nm SiGe BiCMOS. Gm-boosting technology is used to enhance gain in high frequency and multi-coupled-line balun structure is adopted to increase the output power. Moreover, in order to reduce the dependence on high-frequency sources, doubler with dual-path coupled-line approach technology is added to the front end for power drive. The chip area of the PA is 0.54×1.30 mm². The sub-THz PA exhibits a peak gain of 22.7dB in 183GHz. At 200 GHz, 15.3 dBm maximum output power Psat was measured with 148-220 GHz 3dB-bandwidth, making it competitive in D-/G-bands for high-speed wireless communication systems and high-precision radar architectures.