A 300-GHz Broadband High-Output-Power Terahertz Source Based on Low-Q Colpitts Injection-Locked Oscillator

This paper presents a high-output-power, wideband terahertz source based on a novel low-Q common-collector Colpitts injection-locked oscillator combined with a four-way power amplifier. The proposed THz source, designed in 0.13-μm SiGe BiCMOS technology, achieves a locking range (LR) of 19.7% (261–318 GHz) with an 8 dBm injection signal and a 3dB bandwidth of 16.2% (261–307 GHz), delivering approximately 10 dBm of output power and over 80 dBc of in-band fundamental rejection. EM-simulated results demonstrate that the proposed THz source outperforms state-of-the-art injection-locked oscillators in terms of LR, bandwidth, output power, and fundamental rejection.