A W-Band Broadband BCB-air Cavity-Backed Stacked Patch Antenna in Silicon Wafer Level Package

A broadband W-band BCB-air cavity-backed stacked patch antenna in a silicon wafer-level package is proposed. Benefiting from the low-loss dielectric substrate and the stacked patch configuration, the proposed antenna achieves broadband performance with a relative bandwidth of 14 % and a high gain of approximately 7 dBi. The antenna can be fabricated using a silicon-based MEMS composite thin film BCB process, which integrates localized backside etching technology with through-silicon ring trenching. The detailed fabrication process is presented. Furthermore, the proposed AiP can be 3D hetero-geneously integrated with other active components due to its low interconnection loss, enhancing high-frequency performance for millimeter-wave radar and communication systems.