Improved Resistance Model for MOSFET Gate with High Accuracy Based on Measurement Results for Simulation Verification

This paper presents an efficient distributed gate resistor network that enables simulation verification by extracting parasitic effective gate resistor components that match the measurement results with high accuracy in an advanced process (4nm or less). The proposed methodology to modify the distributed gate resistance in existing gate resistance models possible to overcome wrong simulation results issues that may arise in various Electronic Design Automation (EDA) simulation tools caused by negative vertical gate resistance values in previous gate resistance model. This paper suggests not only improvements in the gate resistance network to resolve this limitation but also high accuracy gate resistance model with measurement results.