A Comparative Analysis on the Design of CMOS SRAM for Key Performance Parameters

A comprehensive comparative analysis of four SRAM architectures is presented in this paper, focusing on key performance metrics essential for evaluating their efficiency in advanced technologies. These SRAM cells were designed and simulated using a 90nm CMOS process technology. Using Cadence Virtuoso for detailed simulations, several critical aspects have been examined, including Static Noise Margin (SNM) to assess robustness, read/write stability to ensure reliable data operation, power consumption and dissipation to understand the trade-offs between performance and energy efficiency, and process corner analysis to evaluate performance under varying process and temperature conditions. After thorough investigation, 8T and 10T SRAM stand out the most. Better read/write analysis is displayed by 8T. The overall win in all situations, with its lower power consumption and higher SNM, is provided by 10T SRAM. The strengths and limitations of each SRAM architecture are highlighted by this analysis, guiding designers in optimizing SRAM cells for specific applications and advancing high-speed, space-efficient memory solutions for future integrated circuits.