150 °C compatible 4H-SiC junction transistor for the precise analog analysis on 0.1-pC-level charge signals with 0.7% standard error

A high-temperature compatible 4H-SiC JFET for charge sensitive amplification has been demonstrated in this work. With the excellent quasi-static operation point control in the dual-gated configuration, well blocked gate leakage current, and largely isolated potential coupling in the four terminals configuration, the transistor achieves simultaneously low gate leakage of ~0.1 pA at 200 °C, preferable 1/f noise figure of 2×10^-16 A²/Hz, minor output conductance of ~10^-5 S and small input capacitance of 0.53 fF/μm² per gate area. Correspondingly, precise charge analysis performance for the 10^-13 C signals has been achieved with stand error below 0.7% at high temperatures. This work, thus validates the attractive potentials of wide bandgap SiC in both high-temperature analog amplification electronics and radiation analysis systems.