Room Temperature to 300°C SiC MOSFET Oscillator Under Fixed Bias

Wireless monitoring systems in high-temperature, harsh industrial environments, including oscillator circuits to interface with sensing and transmission components, must operate over temperature ranges of several hundred degrees Celsius. An oscillator under these conditions must deliver sufficient power for wireless transmission while being designed with minimal components to reduce the impact of component temperature variation, increase circuit reliability, and reduce the size and complexity of circuits operating in high temperature harsh environment. A simple single supply biasing scheme is also essential to minimize the number of circuit components and to simplify implementation in harsh environments. In this work, for the first time, an oscillator that operates from room temperature to above 300°C using a single fixed voltage supply and a single SiC commercial transistor that outputs more than 12dBm to a $50\Omega $ load was designed, modelled, fabricated, and tested. Due to its few components, simplicity of operation, and robustness, this oscillator can be used for wireless sensing applications over a wide temperature range with the potential to be powered using energy harvesting. The impact of these fabrication and operational conditions is this circuit fulfilling the needs of a wireless sensing application, with potential for self-powered operation, in high-temperature harsh industrial environments.