Analytical Modeling of MoS2–TiSe2 Heterostructure MOSFET using Extrapolation Technique

The MoS2–TiSe2 heterostructure-based MOSFET is modelled analytically in this work using a polynomial fit extrapolation technique. Strong contenders for next-generation nanoelectronics devices, transition metal dichalcogenides (TMDs) such as MoS2 and TiSe2 provide exceptional electronic characteristic As like tunable bandgaps and high carrier mobility. The proposed model uses a higher-order polynomial regression technique to analytically fit simulated or experimental data in order to capture the current–voltage (I–V) properties of the heterostructure MOSFET. This method makes it possible to accurately extrapolate how the device will behave under various bias scenarios, channel lengths, and temperature changes. In good agreement with TCAD simulations, the model predicts the dielectric constant, absorption coefficient, and refractive index.