Improved Linearity and Switching Performance of AlN/β-Ga2O3 MOSHEMT using Al2O3 Dielectric

This research work introduces an AlN/β-Ga2O3 MOSHEMT design incorporating Al2O3 as dielectric. The het-erostructure of AlN and Ga2O3 results in high mobility two-dimensional electron gas (2-DEG) due to wide band gap of the two materials. A maximum output conductance of 0.3 S/m was measured. High transconductance (gm) enables high-frequency operation and efficient power switching, while its derivatives (gm2, gm3) provide insights into device linearity and distortion, crucial for analog and RF applications. The highest peak for transconductance, first and second derivatives of transconductance is 0.12 S, 0.06 A/V² and 0.12 A/V³ respectively. The on/off current ratio (ION/IOFF) is critical factor for efficient switching and low power consumption in β-Ga2O3 MOSHEMTs. This low subthreshold swing (SS) for β-Ga2O3 MOSHEMTs leads to faster switching and reduced power loss. Optimizing the threshold voltage (Vth) is crucial to balance on-state current and off-state leakage. Technology Computer Aided Design (TCAD) simulations predict a Sub-threshold swing and threshold voltage suitable for device operation. These promising results validate the AlN/β-Ga2O3 MOSHEMT technology for power switching applications.